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| absolute maximum ratings (per die) parameter n-channel p-channel units i d @ v gs = 10v, t c = 25c continuous drain current 1.0 -0.75 i d @ v gs = 10v, t c = 100c continuous drain current 0.6 -0.5 i dm pulsed drain current 4.0 -3.0 p d @ t c = 25c max. power dissipation 1.4 1.4 w linear derating factor 0.011 0.011 w/c v gs gate-to-source voltage 20 20 v e as single pulse avalanche energy 75 75 mj i ar avalanche current 1.0 -0.75 a e ar repetitive avalanche energy 0.14 0.14 mj dv/dt peak diode recovery dv/dt 5.5 -5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (t ypical) g c a www.irf.com 1 product summary part number r ds(on) i d channel irfg6110 0.7 ? 1.0a n irfg6110 1.4 ? -0.75a p mo-036ab irfg6110 jantx2n7336 jantxv2n7336 ref:mil-prf-19500/598 100v, combination 2n-2p-channel hexfet ? mosfet technology power mosfet thru-hole (mo-036ab) hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well- suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight pd-90436g irfg6110 2 www.irf.com for footnotes, refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 1.0 i sm pulse source current (body diode) ? ? 4.0 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 1.0a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f = 1.0a, di/dt 100a/ s q rr reverse recovery charge ? ? 0.83 nc v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics for each n-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.13 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.7 v gs = 10v, i d = 0.6a resistance ? ? 0.8 v gs = 10v, i d = 1.0a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250 a g fs forward transconductance 0.86 ? s v ds > 15v, i ds = 0.6a i dss zero gate voltage drain current ? ? 25 v ds = 80v, v gs = 0v ? ? 250 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 15 v gs =10v, i d = 1.0a, q gs gate-to-source charge ? ? 7.5 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 7.5 t d (on) turn-on delay time ? ? 20 v dd = 50v, i d = 1.0a, t r rise time ? ? 25 v gs =10v, r g = 7.5 ? t d (off) turn-off delay time ? ? 40 t f fall time ? ? 40 l s + l d total inductance ? 10 ? c iss input capacitance ? 180 ? v gs = 0v, v ds = 25v c oss output capacitance ? 82 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 15 ? na nh ns a ? thermal resistance (per die) parameter min typ max units t est conditions r thjc junction-to-case ? ? 17 r thja junction-to-ambient ? ? 90 c/w ? ? note: corresponding spice and saber models are available on international rectifier website. measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) www.irf.com 3 irfg6110 for footnotes, refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -0.75 i sm pulse source current (body diode) ? ? -3.0 v sd diode forward voltage ? ? -5.5 v t j = 25c, i s = -0.75a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f = -0.75a, di/dt -100a/ s q rr reverse recovery charge ? ? 9.0 nc v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units t est conditions r thjc junction-to-case ? ? 17 r thja junction-to-ambient ? ? 90 c/w electrical characteristics for each p-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.098 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.4 v gs = -10v, i d = -0.5a resistance ? ? 1.73 v gs = -10v, i d = -0.75a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250 a g fs forward transconductance 0.67 ? ? s v ds > -15v, i ds = -0.5a i dss zero gate voltage drain current ? ? -25 v ds = -80v, v gs = 0v ? ? -250 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = - 20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 15 v gs = -10v, i d = -0.75a, q gs gate-to-source charge ? ? 7.0 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 8.0 t d (on) turn-on delay time ? ? 30 v dd = -50v, i d = -0.75a, t r rise time ? ? 60 v gs = -10v, r g = 7.5 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 80 l s + l d total inductance ? 10 ? . c iss input capacitance ? 200 ? v gs = 0v, v ds = -25v c oss output capacitance ? 85 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 30 ? na nh ns a ? measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) irfg6110 4 www.irf.com n-channel g1,g3 www.irf.com 5 irfg6110 ! ! " " " #$ n-channel g1,g3 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) dc irfg6110 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* + " n-channel g1,g3 www.irf.com 7 irfg6110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ,- ! .! %& & ' " / ( & %& / ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v n-channel g1,g3 v gs irfg6110 8 www.irf.com p-channel g2,g4 www.irf.com 9 irfg6110 ! ! " " " #$ p-channel g2,g4 ! 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) dc irfg6110 10 www.irf.com ' & ( )* + " $ $ %& 1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f p-channel g2,g4 www.irf.com 11 irfg6110 & ' " / ( & %& / ( & t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v ! .! %& q g q gs q gd v g charge ,- d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - p-channel g2,g4 v gs irfg6110 12 www.irf.com pulse width 300 s; duty cycle 2% v dd = -25v, starting t j = 25c, l= 266mh, peak i l = -0.75a, v gs = -10v i sd -0.75a, di/dt -75a/ s, v dd -100v, t j 150c repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 150mh, peak i l = 1.0a, v gs = 10v i sd 1.0a, di/dt 75a/ s, v dd 100v, t j 150c case outline and dimensions ? mo-036ab footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2010 g3 g4 g2 g1 g3 g4 g2 g1 channels n ch.- g1, g3 p ch.- g2, g4 |
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